ELE 3101 - Electronics I

3 lecture hours 2 lab hours 4 credits
Course Description
This first course in electronics establishes the fundamental mathematical modeling and applications of solid-state devices and operational amplifiers. The device characteristics of p-n junction diodes, bipolar junction transistors (BJTs), and metal oxide semiconductor field effect transistors (MOSFETs) are considered. Diode circuits, linear power supplies, and transistor switching circuits are analyzed.  Design applications include single-stage MOSFET amplifiers, operational amplifier circuits, active filters, and signal conditioning circuits. Circuit simulation software is utilized as an engineering design tool.
Prereq: ELE 2011  (quarter system prereq: EE 2070 or EE 3002B or EE 2725)
Note: This course is not available to students with credit for BME 3710 .
This course meets the following Raider Core CLO Requirement: None
Course Learning Outcomes
Upon successful completion of this course, the student will be able to:
  • Explain the operation of semiconductor devices
  • Analyze basic diode circuits
  • Perform DC analysis of BJTs and MOSFETs
  • Analyze switching/logic circuit behavior of both BJTs and MOSFETs
  • Design single-stage amplifier circuits using MOSFETs
  • Describe the fundamental concepts and circuits of operational amplifiers
  • Design operational amplifier circuits with resistive feedback
  • Design basic active operational amplifier filters
  • Experimentally implement electronic circuits with electronic devices
  • Document experimental results
  • Perform circuit simulation in electronic circuit analysis and design

Prerequisites by Topic
  • DC and AC electric circuit analysis
  • Ideal op-amp properties
  • Op-amp circuit analysis in standard and non-standard configurations
  • Model and Thevenin/Norton equivalent circuit concepts and analysis
  • Dependent sources
  • Ideal transformers
  • Frequency response, transfer functions, and Bode plots of first-order circuits
  • Resonant circuits
  • Time domain and Laplace transient analysis

Laboratory Topics
  • PN junction device i-v characteristics
  • BJT and MOSFET i-v characteristics and DC bias
  • Linear power supplies
  • Transistor switching circuits
  • Basic common-source (CS) MOSFET amplifier design
  • Op-amp circuit designs
  • Signal conditioning circuit design (open-ended design focus)

Coordinator
Dr. Steve Holland


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